Advanced modeling of nanowire transistors
Submitted by Daniel Lizzit on Sat, 07/06/2014 - 17:44
With the ever-increasing demand for integration of electronic devices with reduced power dissipation, down-scaling of power supply (VDD) has become progressively more and more necessary. Furthermore, semiconductors alternative to silicon and belonging to the III-V group of the periodic table, such as InAs, InGaAs, GaSb, are being actively investigated to further improve the device performances with respect to silicon-based transistor and, in particular, reduce the supply voltage while preserving good dynamic performance. In this framework, we focused on modeling developments and design options for Silicon On Insulator (SOI) planar and gate-all-around (GAA) nanowire MOSFETs, which are among the most promising means for ultimate device scaling."
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