Efficient simulation of nanoscale electron devices
Submitted by Patrik Osgnach on Sat, 07/06/2014 - 17:38
The development of nanoscale electron devices involves very sophisticated simulation models. Complex transport and quantisation effects influence the performances of these devices and must be modelled accordingly, especially when alternative channel materials (as III-V materials) are employed. The main issue with these models is that they are very demanding from a computational point of view, so code optimization and parallelization is mandatory in order to make the simulators implementing these models fast enough to be used by the semiconductor industry. Also, regarding the III-V materials, trap states lying between the gate dielectric and the semiconductor have an important effect on the performances of the device and these effects require accurate models.
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