Physics-based modeling of transport in SOI MOSFETs

Ultra-Thin Body and Box Fully depleted SOI transistor is considered one of the best alternative device concepts to overcome the limitations of mainstream bulk C-MOSFETs, especially for low power applications. In this presentation, a multi-scale simulation strategy is reported from quantum Non-Equilibrium Green’s Functions to semi-classical Kubo Greenwood and Multi subband Monte Carlo approaches. These advanced solvers made possible a throughout calibration of empirical TCAD mobility models and are compared to split-CV mobility measurements. After a brief review of stain engineering techniques, special care will be paid to the modeling of stress-induced mobility variation.
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Ingegneria Elettronica