Simulation study of the Graphene Base Transistor
Submitted by Stefano Venica on Sat, 07/06/2014 - 17:44
The recently proposed Graphene Base Transistor (GBT) is a promising device concept for analog applications. The device exploits the great potentialities of graphene as high mobility material and it is based on a vertical arrangement of an emitter, a graphene base and a collector separated by two insulators. In particular, the use of graphene would ensure a low value for the base resistance, that usually limits the performance of conventional RF devices. At the moment, since the RF performance of the GBT can be investigated by simulations only, a model has been developed to predict the RF figures of merit and to understand their dependence on the GBT design options (i.e. dimensions and materials). The model has been used to explore the GBT design space and to propose an optimization strategy of the device structure, in terms of emitter and dielectrics combinations. Finally, a Monte Carlo transport model has been developed to understand the experimental behaviour of the fabricated GBTs. In particular, the charge transport inside the dielectrics and across graphene has been analyzed to investigate the origin of the measured base current.
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